Semiconductor Power Devices

Semiconductor Power Devices

Volume 1: Physics, Technology and Design of Power Devices

von Josef Lutz

This new edition of the book Semiconductor Power Devices: Physics, Characteristics, Reliability is now divided into two volumes. This first volume focuses on the Physics, Technology, and Design of Power Devices. It provides a comprehensive explanation of semiconductor properties, pn-junctions, and the physical principles essential for understanding modern power devices. Readers will find detailed coverage of state-of-the-art diodes, thyristors, MOSFETs, and IGBTs, along with new chapters on SiC and GaN technologies, cooling concepts, packaging, and reliability. The edition also introduces extended content on SiC-specific requirements and a dedicated chapter on cosmic ray failures, offering significant updates compared to previous editions.

This new edition of the book Semiconductor Power Devices: Physics, Characteristics, Reliability is now divided into two volumes. This first volume focuses on the Physics, Technology, and Design of Power Devices. It provides a comprehensive explanation of semiconductor properties, pn-junctions, and the physical principles essential for understanding modern power devices. Readers will find detailed coverage of state-of-the-art diodes, thyristors, MOSFETs, and IGBTs, along with new chapters on SiC and GaN technologies, cooling concepts, packaging, and reliability. The edition also introduces extended content on SiC-specific requirements and a dedicated chapter on cosmic ray failures, offering significant updates compared to previous editions.

Highlights

• Describes structure, characteristics and technical features of specific power devices Includes sections on packaging and reliability Uniquely deals with the effects of emitters

Über den Autor

Josef Lutz was Professor of Power Electronics and Electromagnetic Compatibility at TU Chemnitz, Germany, and is now staff member. His research focuses on power semiconductor devices, packaging, and reliability. He is widely recognized for inventing the Controlled Axial Lifetime (CAL) diode, a breakthrough in diode technology.

Heinrich Schlangenotto is a physicist based in Gütersloh, Germany, specializing in the physics of semiconductor power devices and their dynamic behavior. He pioneered the fast, soft recovery SPEED-diode, improving the performance of rectifier diodes.

Uwe Scheuermann worked for more than 30 years at Semikron in Nuremberg, Germany, in power module design, packaging technologies, and reliability. He contributed to introduce innovative packaging concepts such as spring contacts, shaping modern power module architecture.

Rik De Doncker is Professor at RWTH Aachen University, Germany, heading the Institute for Power Electronics and Electrical Drives (ISEA) and the Institute for Power Generation and Storage Systems (PGS) at E.ON ERC. His research focusses on power electronics and high-power converters. Among others, he is known for proposing in 1988 the three-phase Dual Active Bridge, a soft-switching bi-directional galvanically isolated DC-DC converter, a milestone in high-power medium-voltage converter technology.